Detailed analysis of the influence of an ICP-RIE process on the hole depth and shape for photonic crystals in InP/InGaAsP
In: Journal of Vacuum Science and Technology B : Nanotechnology and Microelectronics, Vol. 25 (2007), No. 2, pp. 387 - 393
2007article/chapter in journal
Electrical Engineering and Information TechnologyFaculty of Engineering
Title in English:
Detailed analysis of the influence of an ICP-RIE process on the hole depth and shape for photonic crystals in InP/InGaAsP
Author:
Strasser, Patrick;Wüest, Robert;Robin, Franck;Erni, DanielUDE
- GND
- 1175897205
- LSF ID
- 47126
- ORCID
- 0000-0002-1467-6373
- Other
- connected with university
Year of publication:
2007
Language of text:
English