Nellen, Philipp M.; Strasser, Patrick; Callegari, Victor; Wüest, Robert; Erni, Daniel; Robin, Franck:
Focused ion beam modifications of indium phosphide photonic crystals
In: Microelectronic engineering : an international journal of semiconductor manufacturing technology, Vol. 85 (2007), No. 5-8, pp. 1244 - 1247
2007article/chapter in journal
Electrical Engineering and Information Technology
Title:
Focused ion beam modifications of indium phosphide photonic crystals
Author:
Nellen, Philipp M.;Strasser, Patrick;Callegari, Victor;Wüest, Robert;Erni, DanielUDE
GND
1175897205
LSF ID
47126
ORCID
0000-0002-1467-6373ORCID iD
Other
connected with university
;Robin, Franck
Year of publication:
2007
WWW URL:
http://www.ate.uni-due.de/data/dokumente/MEE_2007_Nellen.pdf
Appears in
Microelectronic engineering : an international journal of semiconductor manufacturing technology
in:
Vol. 85 (2007), No. 5-8, pp. 1244 - 1247
ISSN
0167-9317 Show availability online & print

Abstract:

This paper presents investigations in focused ion beam structuring and modification of indium phosphide/indium gallium arsenide phosphide based photonic crystal power splitters. The optical transmission and splitting ratio were compared to devices fabricated with electron beam lithography and inductively-coupled plasma, reactive ion etching. Prototyping of novel photonic designs, chip modifications, repair, and post-processing with focused ion beams may well reduce time to market in the telecommunication industry.