Mode-locked InP-based laser diode with a monolithic integrated UTC absorber for subpicosecond pulse generation
In: IEEE journal of quantum electronics : a publication of the IEEE Lasers and Electro-Optics Society, Vol. 45 (2009), No. 4, pp. 322 - 335
2009article/chapter in journal
Electrical Engineering and Information Technology
Title:
Mode-locked InP-based laser diode with a monolithic integrated UTC absorber for subpicosecond pulse generation
Author:
Scollo, Riccardo;Lohe, Hans-Jörg;Robin, Franck;Erni, DanielUDE
- GND
- 1175897205
- LSF ID
- 47126
- ORCID
-
0000-0002-1467-6373
- Other
- connected with university
Year of publication:
2009
Appears in
IEEE journal of quantum electronics : a publication of the IEEE Lasers and Electro-Optics Society
in:
Vol. 45 (2009), No. 4, pp. 322 - 335
ISSN
Abstract:
Future optical transmission systems and signal processing circuits will require optical pulse sources capable of producing subpicosecond (sub-ps) pulses with low timing jitter at repetition rates of tens of gigahertz. In this paper, we present the theory, design, and measurements of a novel InP-based hybrid mode-locked laser diode (MLLD) structure with an ultrafast monolithically integrated, reverse-biased, uni-traveling-carrier(UTC) absorber. The necessity of an ultrafast absorber to obtain sub-ps pulses is analyzed and explained with our advanced time-domain rate-equation model. The realized MLLD demonstrated clean sub-ps pulses of 900 fs at 42-GHz repetition rate and the potential in an optimized device to reach values around 600 fs.