Microscopic investigation of InGaN/GaN heterostructure laser diode degradation using Kelvin probe force microscopy
In: Journal of Physics D : Applied Physics, Vol. 41 (2008), No. 13, p. 135115
2008article/chapter in journal
Electrical Engineering and Information TechnologyPhysics (incl. Astronomy)Materials EngineeringScientific institutes » Center for Nanointegration Duisburg-Essen (CENIDE)
Related: 1 publication(s)
Title in English:
Microscopic investigation of InGaN/GaN heterostructure laser diode degradation using Kelvin probe force microscopy
Author:
Lochthofen, André;Mertin, WolfgangUDE
- LSF ID
- 1452
- ORCID
-
0000-0001-6792-6033
- Other
- connected with university
- GND
- 110666038
- LSF ID
- 3929
- ORCID
-
0000-0001-8419-2158
- Other
- connected with university
Year of publication:
2008
Language of text:
English
Appears in
Title in English (abbreviated):
J Phys D
Place of publication:
Bristol
Publisher:
IOP Publishing
in:
Vol. 41 (2008), No. 13, p. 135115
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