Alkeev, N. V.; Averin, S. V.; Dorofeev, A. A; Velling, P.; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef:
Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers
In: Semiconductors, Jg. Vol. 41 (2007), Heft No. 2, S. 227 - 231
2007Artikel/Aufsatz in ZeitschriftElektrotechnik
Titel:
Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers
Autor(in):
Alkeev, N. V.; Averin, S. V.; Dorofeev, A. A; Velling, P.; Khorenko, E.; Prost, WernerLSF; Tegude, Franz-JosefLSF
Erscheinungsjahr
2007

Abstract:

A frequency-dependent impedance analysis (0.1-50 GHz) of an InGaAs/InAlAs-based resonant tunneling diode with a 5-nm-wide well and 5-nm-thick barriers showed that the transport mechanism in such a diode is mostly sequential, rather than coherent, which is consistent with estimates. The possibility of determining the coherent and sequential mechanism fractions in the electron transport through the resonant tunneling diode by its frequency dependence on the impedance is discussed.