Si/SiGe interband tunnelling diodes have been grown by MBE an high resistivity (n(-)) silicon substrates. The device enables a very low voltage, high-speed logic on silicon substrate. A novel self-aligned diode is processed using optical lithography and dopant-selective wet chemical etching. A maximum speed index for a 60 mum(2) anode area device is evaluated to 2.2 ns/V resulting in a switching speed of 0.5 ns. A logic latch built of two series connected diodes (MOBILE principle) is demonstrated,showing very robust logic operation at a supply voltage as low as 0.3 V. The used technology may be used for a co-integration with both SiGe heterostructure bipolar- and field effect transistor technology and may contribute to future low-voltage high speed logic on Si-substrates.