Jnawali, Giriraj; Hattab, Hichem; Bobisch, Christian; Zubkov, E.; Deiter, C.; Weisemoeller, T.; Bertram, F.; Wollschläger, J.; Möller, Rolf; Horn-von Hoegen, Michael:
Epitaxial growth of Bi(111) on Si(001)
In: e-Journal of Surface Science and Nanotechnology, Band 7 (2009), S. 441 - 447
2009Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » ExperimentalphysikForschungszentren » Center for Nanointegration Duisburg-Essen (CENIDE)
Damit verbunden: 1 Publikation(en)
Titel in Englisch:
Epitaxial growth of Bi(111) on Si(001)
Autor*in:
Jnawali, GirirajUDE
LSF ID
10417
ORCID
0000-0003-0954-8614ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Hattab, HichemUDE
LSF ID
49259
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Bobisch, ChristianUDE
LSF ID
10408
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Zubkov, E.;Deiter, C.;Weisemoeller, T.;Bertram, F.;Wollschläger, J.;Möller, RolfUDE
GND
1252401639
LSF ID
10359
ORCID
0000-0003-1924-8615ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2009
Sprache des Textes:
Englisch

Abstract in Englisch:

Despite the large lattice misfit and different lattice symmetry, it is possible to grow smooth and almost defect-free bismuth (Bi) films on a Si(001) substrate. High resolution low-energy electron diffraction measurements have confirmed that the (111) orientation is the preferred direction of the growth. However, at low temperature and low coverage regime, rotationally disordered crystallites of (110) orientation are also observed. After the formation of a continuous layer at 5.6 bilayer (2.2nm), the growth occurs in a bilayer-by-bilayer fashion at 150 K. The remaining lattice mismatch of 2.3% is accommodated by a periodic array of interfacial misfit dislocations, which gives rise to a periodic surface height undulation with sub-ångström amplitude. Additional growth to the desired thickness caps the height undulation resulting in an atomically smooth surface (terrace size > 100nm). The Bi(111) film is relaxed to bulk lattice constant and shows excellent crystalline quality with an abrupt interface to the Si substrate