Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM,
In: Physical Review B : Condensed matter and materials physics, Jg. 74 (2006), Heft 19, 195340 (5p)
2006Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Damit verbunden: 1 Publikation(en)
Titel:
Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM,
Autor*in:
Jnawali, GirirajUDE
- LSF ID
- 10417
- ORCID
-
0000-0003-0954-8614
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- LSF ID
- 49259
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
-
0000-0003-0324-3457
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2006
Erscheinungsort:
College Park
Verlag:
American Physical Society (APS)
in:
Jg. 74 (2006), Heft 19, 195340 (5p)
ISSN
ISSN
ISSN
ISSN
ZDB ID
Signatur der UB:
Notiz:
1.1970 - 92.2015
Abstract:
The growth of Bi on a Si(001) surface is studied in situ by spot profile analyzing low-energy electron diffraction and ex situ by atomic force microscopy. A continuous epitaxial Bi(111) film with a thickness of 6 nm is grown at 150 K in a bilayer growth mode. During annealing to 450 K the lattice mismatch between Si(001) and Bi(111) is accommodated by a periodic interfacial misfit dislocation array. On this relaxed template, Bi(111) films can be grown to any desired thickness. Such films are composed of twinned and 90° rotated micrometer sized Bi(111) crystallites with a roughness of less than 0.6 nm for a 30 nm thick film.