Less strain energy despite fewer misfit dislocations: The impact of ordering
In: Physical Review Letters, Vol. 96 (2006), No. 6, 66101 (4p)
2006article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Related: 1 publication(s)
Title:
Less strain energy despite fewer misfit dislocations: The impact of ordering
Author:
Schmidt, Th.;Kröger, R.;Flege, J.I.;Clausen, T.;Falta, J.;Janzen, A.;Zahl, P.;Kury, Peter;Kammler, MartinUDE
- LSF ID
- 50189
- Other
- connected with university
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
-
0000-0003-0324-3457
- Other
- connected with university
Year of publication:
2006
Appears in
Place of publication:
College Park
Publisher:
American Physical Society (APS)
in:
Vol. 96 (2006), No. 6, 66101 (4p)
ISSN
ISSN
ZDB ID
Library shelfmark:
Abstract:
The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.