SSIOD: the next generation
In: Review of Scientific Instruments, Vol. 76 (2005), No. 2, 23903 (7p)
2005article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Related: 1 publication(s)
Title:
SSIOD: the next generation
Author:
Kury, Peter;Grabosch, T.;Horn-von Hoegen, MichaelUDE
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
-
0000-0003-0324-3457
- Other
- connected with university
Year of publication:
2005
Appears in
Title in English (abbreviated):
Rev. Sci. Instrum.
Title in English (abbreviated):
Rev. of Sci. Instrum.
Place of publication:
Melville
Publisher:
American Institute of Physics (AIP)
in:
Vol. 76 (2005), No. 2, 23903 (7p)
ISSN
ISSN
ZDB ID
Library shelfmark:
Abstract:
Surface stress induced optical deflection (SSIOD) is a bending sample method for the in situ determination of the surface stress with a typical resolution of about 0.15 N/m. Here we present the latest version of SSIOD with major improvements concerning the sample shape and clamping, the laser system and the position detectors. With these modifications SSIOD becomes an easily applicable method to most UHV systems and can be combined with other surface analytical methods like SPA-LEED, Auger-CMA, XPS, UPS or maybe even with microscopy such as the flange-on LEEM. The presented modifications also improve the resolution of the method to below 0.01 N/m.