Characterizing Single Crystal Surfaces using High Resolution Electron Diffraction,
In: Analytical and Bioanalytical Chemistry, Vol. 379 (2004), No. 4, pp. 588 - 593
2004article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Related: 1 publication(s)
Title:
Characterizing Single Crystal Surfaces using High Resolution Electron Diffraction,
Author:
Thien, DagmarUDE
- LSF ID
- 10445
- Other
- connected with university
- LSF ID
- 48700
- ORCID
-
0000-0002-5878-2012
- Other
- connected with university
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
-
0000-0003-0324-3457
- Other
- connected with university
Year of publication:
2004
Appears in
Title in English (abbreviated):
Anal Bioanal Chem
Place of publication:
Berlin
Publisher:
Springer
in:
Vol. 379 (2004), No. 4, pp. 588 - 593
ISSN
ISSN
ZDB ID
Library shelfmark:
Note:
seit 372.2002 -
Abstract:
Characterization and controlled manipulation of surfaces is a crucial factor in modern processing of the technologically relevant Si(100) surface. Using spot profile analyzing low energy electron diffraction, the morphological changes from a single stepped vicinal Si(100) surface to a single-domain (2×1) reconstructed surface have been investigated in situ during Si deposition. The temperature range for formation of this kinetically-stabilized single-domain surface was found to be 400–500 °C. This single-domain surface could be preserved for further characterization and experiments after quenching to room temperature.