Kammler, Martin; Horn-von Hoegen, Michael:
Transition in growth mode by competing strain relaxation mechanisms: surfactant mediated epitaxy of SiGe alloys on Si
In: Applied Physics Letters, Vol. 85 (2004), No. 15, 3056 (3p)
2004article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Title:
Transition in growth mode by competing strain relaxation mechanisms: surfactant mediated epitaxy of SiGe alloys on Si
Author:
Kammler, MartinUDE
LSF ID
50189
Other
connected with university
;
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Other
connected with university
Year of publication:
2004

Abstract:

Surfactant mediated epitaxy of Si(1−x)Gex alloys on Si(111) can, besides technological importance, clarify the influence of the lattice mismatch during surfactant mediated heteroepitaxial growth. For low Ge concentration we find an immediate layer-by-layer growth, whereas at high Ge concentration a roughening transition followed by relaxation of the lattice mismatch in a periodic dislocation network is preferred. This behavior can be explained by comparing the dislocation nucleation rate on a smooth surface with the island nucleation rate on a pseudomorphic film.