Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates
In: Electronic Letters, Vol. 35 (1999), pp. 503 - 504
1999article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Title:
Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates
Author:
Reinking, Dirk;Kammler, MartinUDE
- LSF ID
- 50189
- Other
- connected with university
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
- 0000-0003-0324-3457
- Other
- connected with university
Year of publication:
1999
Abstract:
The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs