Reinking, Dirk; Kammler, Martin; Hoffmann, N.; Horn-von Hoegen, Michael; Hofmann, Karl R.:
Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates
In: Electronic Letters, Vol. 35 (1999), pp. 503 - 504
1999article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Title:
Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates
Author:
Reinking, Dirk;Kammler, MartinUDE
LSF ID
50189
Other
connected with university
;
Hoffmann, N.;Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Other
connected with university
;
Hofmann, Karl R.
Year of publication:
1999

Abstract:

The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs