Meier, A.; Zahl, P.; Vockenrodt, R.; Horn-von Hoegen, Michael:
Step arrangement control of vicinal Si(001) by Ag adsorption
In: Applied Surface Science, Vol. 123/124 (1998), pp. 694 - 698
1998article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Related: 1 publication(s)
Title:
Step arrangement control of vicinal Si(001) by Ag adsorption
Author:
Meier, A.;Zahl, P.;Vockenrodt, R.;Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Other
connected with university
Year of publication:
1998
DOI
10.1016/S0169-4332(97)00431-5
Appears in
Applied Surface Science
Title in English (abbreviated):
Appl Surf Sci
Place of publication:
Amsterdam
Publisher:
Elsevier
in:
Vol. 123/124 (1998), pp. 694 - 698
ISSN
0169-4332 Show availability online & print
ISSN
1873-5584 Show availability online & print
ZDB ID
2002520-8
Library shelfmark:
67 A 19

Abstract:

Upon adsorption of Ag on 4° vicinal Si(001) the existing double steps form bunches with multiple step heights separated by flat (001) terraces. The step rearrangement is completely reversible and can be controlled by the adsorption temperature. Below 550°C an extremely regular array of 4-fold steps results. At higher temperatures the formation of a mixture of (115)- and (117)-facets, composed of up to 25 double steps has been observed. Using this method a regular series of flat and straight (001) terraces with an temperature controlled width of up to 100 nm could be generated.