Bahr, D.; Falta, J.; Materlik, G.; Müller, B.H.; Horn-von Hoegen, Michael:
X-ray interface characterization of Ge delta layers on Si(001)
In: Physica B: Condensed Matter, Vol. 221 (1996), No. 1-4, pp. 96 - 100
1996article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Title:
X-ray interface characterization of Ge delta layers on Si(001)
Author:
Bahr, D.;Falta, J.;Materlik, G.;Müller, B.H.;Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Other
connected with university
Year of publication:
1996

Abstract:

Detailed characterization of extremely thin buried Ge films of monolayer thickness (δ layers) was performed by combination of grazing incidence X-ray reflectivity, crystal truncation rods, and X-ray standing waves. Grazing incidence reflectivity and crystal truncation rods are used to determine the average layer thicknesses and interface roughnesses as well as the stoichiometry of the layers. X-ray standing wave measurements give an independent measure of the epitaxial quality of the Ge film. Ge δ layers on Si(001) were grown by molecular beam epitaxy (MBE) at 350°C with coverage ranging from 1 to 6 ML. We find strong segregation of the first deposited Ge monolayer with subsequent Si deposition. Upon deposition of more Ge, additional Ge forms a Ge film at the Si/Ge interface. The thickness of this film is limited by Ge island formation for Ge coverage exceeding 3–4 ML.