Abstract:

The effect of different methods of growth on the interface quality of extremely thin buried GexSi1−x films (δ layers) was studied by means of in situ spot profile analysis low‐energy electron diffraction and extensive postgrowth x‐ray characterization by measurements of crystal truncation rods and x‐ray standing waves. In comparison to molecular beam epitaxy, solid phase epitaxy and surfactant mediated growth result in a significant reduction of Ge–Si intermixing and interface roughness. © 1996 American Institute of Physics.