Surfactants in Si(111) homoepitaxy
In: Applied Physics Letters, Vol. 66 (1995), No. 4, pp. 487 - 489
1995article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Title:
Surfactants in Si(111) homoepitaxy
Author:
Horn-von Hoegen, MichaelUDE
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
- 0000-0003-0324-3457
- Other
- connected with university
Year of publication:
1995
Abstract:
Si epitaxy is strongly affected by the presence of an adsorbate (surfactant). We have examined both film quality and dopant incorporation in homoepitaxy for Sb, As, and Ga terminated Si(111). The efficency of site exchange between Si and adsorbate depends sensitively on binding energy and binding geometry of the adsorbate. For a weakly bound adsorbate (Ga or Sb), there is no inhibition of epitaxy, but a strongly bound adsorbate (As) kinetically inhibits growth