Horn-von Hoegen, Michael; Pietsch, Holger:
Homoepitaxy of Si(111) is surface defect mediated
In: Surface Science, Vol. 321 (1994), No. 1-2, pp. L129 - L136
1994article/chapter in journal
Physics (incl. Astronomy)
Related: 1 publication(s)
Title in English:
Homoepitaxy of Si(111) is surface defect mediated
Author:
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Other
connected with university
corresponding author
;
Pietsch, Holger
Year of publication:
1994
Language of text:
English