Nucleation and growth during molecular beam epitaxy (MBE) of Si on Si(111)
The 11th International Seminar on Surface Physics ; May 11-16, 1987, Piechowice, Poland
In: Surface Science, Vol. 200 (1988), No. 2-3, pp. 235 - 246
Title in English:
Nucleation and growth during molecular beam epitaxy (MBE) of Si on Si(111)
Conference
The 11th International Seminar on Surface Physics ; May 11-16, 1987, Piechowice, Poland
Author:
Altsinger, R.;Busch, H.;Horn-von Hoegen, MichaelUDE
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
-
0000-0003-0324-3457
- Other
- connected with university
Year of publication:
1988
Language of text:
English
Appears in
Title in English (abbreviated):
Surf Sci
Place of publication:
Amsterdam
Publisher:
Elsevier
in:
Vol. 200 (1988), No. 2-3, pp. 235 - 246
ISSN
ISSN
ZDB ID
Type of resource:
Text