Photosensitive Metal–Insulator–Semiconductor Devices with Stepped Insulating Layer
In: Electrochemical and Solid-State Letters (ESL), Jg. 12 (2009), Heft 12, S. H453 - H455
2009Artikel/Aufsatz in ZeitschriftOpen Access
ChemieFakultät für Chemie » Physikalische Chemie
Titel in Englisch:
Photosensitive Metal–Insulator–Semiconductor Devices with Stepped Insulating Layer
Autor*in:
Stella, KevinUDE
- LSF ID
- 49841
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- LSF ID
- 11102
- ORCID
-
0000-0002-5587-2557
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2009
Open Access?:
Open Access
Scopus ID
Sprache des Textes:
Englisch
Erschienen in
Electrochemical and Solid-State Letters (ESL)
Erscheinungsort:
Philadelphia
Verlag:
Electrochemical Society (ECS)
in:
Jg. 12 (2009), Heft 12, S. H453 - H455
ISSN
ISSN
ZDB ID
Abstract in Englisch:
A preparation procedure based on localized electrochemical oxidation unites multiple metal-insulator-semiconductor (MIS) junctions (also arrays) in a single device. The "stepped MIS" enables a comparative study of several MIS junctions of different oxide thicknesses on one silicon wafer. We present a Si-SiOx-Au four-step device with oxide thicknesses of 0, 1, 2.5, and 4 nm. The samples are characterized by internal photoemission using variable wavelengths (300-1100 nm). The " 1 nm " junction shows an increased photosensitivity compared to the " 0 nm " junction (metal-semiconductor system). The internal photoemission drops by 2 orders of magnitude when increasing the oxide thickness from 1 to 4 nm. © 2009 The Electrochemical Society.