Hanisch-Blicharski, Anja; Krenzer, Boris; Möllenbeck, Simone; Ligges, Manuel; Zhou, Ping; Kammler, Martin; Horn-von Hoegen, Michael:
Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction"
In: MRS Proceedings, Band 1172 (2009), S. 4 - 8
2009Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Titel:
Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction"
Autor*in:
Hanisch-Blicharski, AnjaUDE
LSF ID
12007
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Krenzer, Boris;Möllenbeck, Simone;Ligges, ManuelUDE
LSF ID
13457
ORCID
0000-0001-8172-0568ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Zhou, PingUDE
LSF ID
10448
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Kammler, MartinUDE
LSF ID
50189
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2009

Abstract:

With time resolved ultrafast electron diffraction the cooling process across the interface between a thin film and the underlying substrate was studied after excitation with short laser pulses. From the exponential decay of the surface temperature evolution a thermal boundary conductance of 1430 W/(cm2K) is determined for a 9.7 nm thin Bi(111) film on Si(111). A linear dependence between laser fluence and initial temperature rise was measured for film-thicknesses between 2.5 nm and 34.5 nm. The ratio of initial temperature rise and laser fluence for different film-thicknesses is compared to a model taking multilayer optics into account. The data agree well with this model.