Less strain energy despite fewer misfit dislocations: The impact of ordering
In: Physical Review Letters, Jg. 96 (2006), Heft 6, 66101 (4p)
2006Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Damit verbunden: 1 Publikation(en)
Titel:
Less strain energy despite fewer misfit dislocations: The impact of ordering
Autor*in:
Schmidt, Th.;Kröger, R.;Flege, J.I.;Clausen, T.;Falta, J.;Janzen, A.;Zahl, P.;Kury, Peter;Kammler, MartinUDE
- LSF ID
- 50189
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
- 0000-0003-0324-3457
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2006
Abstract:
The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.