Schmidt, Th.; Kröger, R.; Flege, J.I.; Clausen, T.; Falta, J.; Janzen, A.; Zahl, P.; Kury, Peter; Kammler, Martin; Horn-von Hoegen, Michael:
Less strain energy despite fewer misfit dislocations: The impact of ordering
In: Physical Review Letters, Jg. 96 (2006), Heft 6, 66101 (4p)
2006Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Damit verbunden: 1 Publikation(en)
Titel:
Less strain energy despite fewer misfit dislocations: The impact of ordering
Autor*in:
Schmidt, Th.;Kröger, R.;Flege, J.I.;Clausen, T.;Falta, J.;Janzen, A.;Zahl, P.;Kury, Peter;Kammler, MartinUDE
LSF ID
50189
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2006

Abstract:

The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.