Transition in growth mode by competing strain relaxation mechanisms: surfactant mediated epitaxy of SiGe alloys on Si
In: Applied Physics Letters, Jg. 85 (2004), Heft 15, 3056 (3p)
2004Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Titel:
Transition in growth mode by competing strain relaxation mechanisms: surfactant mediated epitaxy of SiGe alloys on Si
Autor*in:
Kammler, MartinUDE
- LSF ID
- 50189
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
-
0000-0003-0324-3457
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2004
Erschienen in
Applied Physics Letters
in:
Jg. 85 (2004), Heft 15, 3056 (3p)
ISSN
ISSN
Abstract:
Surfactant mediated epitaxy of Si(1−x)Gex alloys on Si(111) can, besides technological importance, clarify the influence of the lattice mismatch during surfactant mediated heteroepitaxial growth. For low Ge concentration we find an immediate layer-by-layer growth, whereas at high Ge concentration a roughening transition followed by relaxation of the lattice mismatch in a periodic dislocation network is preferred. This behavior can be explained by comparing the dislocation nucleation rate on a smooth surface with the island nucleation rate on a pseudomorphic film.