Horn-von Hoegen, Michael; Henzler, M.; Meyer, G.:
Ag on Si surfaces: from insulator to metal
In: Morphological Organization in Epitaxial Growth : (Series on Directions in Condensed Matter Physics, Vol. 14) / Zhang, Zhenyu; Lagally, Max G. (Hrsg.). - World Scientific, 1999, S. 403 - 420
1999Buchaufsatz/Kapitel in Sammelwerk
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Titel:
Ag on Si surfaces: from insulator to metal
Autor*in:
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Henzler, M.;Meyer, G.

Abstract:

This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories — the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.