Horn-von Hoegen, Michael:
Spot profile analysis low energy electron diffraction of semiconductor growth
In: Zeitschrift für Kristallographie, Band 214 (1999), S. 591 - 629
1999Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Titel:
Spot profile analysis low energy electron diffraction of semiconductor growth
Autor*in:
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
1999

Abstract:

The universal capabilities of high resolution spot profile analysis low energy electron diffraction for in situ studies of surface morphology and surface defects will be discussed and demonstrated. The position of the diffraction spots is used to determine lateral lattice constants, step heights and the strain state of heterosystems with a precision of 0.02Å. With the knowledge of the spot profile we could determine island and domain size distributions - even during deposition - and correlation functions of arbitrary surface defects. The variation of the spot profile with electron energy allows the evaluation of the 3dim. reciprocal space. With this the power spectrum of surface roughness, facet orientation, or step morphology of flat and vicinal surfaces could be completely characterised.