Adsorbate induced change of equilibrium surface during crystal growth: Si on Si(111)/H
In: Physical Review Letters, Jg. 76 (1996), Heft 16, S. 2953 - 2956
1996Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Damit verbunden: 1 Publikation(en)
Titel:
Adsorbate induced change of equilibrium surface during crystal growth: Si on Si(111)/H
Autor*in:
Horn-von Hoegen, MichaelUDE
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
-
0000-0003-0324-3457
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
1996
Erschienen in
Erscheinungsort:
College Park
Verlag:
American Physical Society (APS)
in:
Jg. 76 (1996), Heft 16, S. 2953 - 2956
ISSN
ISSN
ZDB ID
Signatur der UB:
Abstract:
Surface termination of Si(111) with atomic hydrogen changes the homoepitaxial growth from a layer-by-layer mode (bare surface) to a faceting of the whole surface. This decomposition of the planar surface into a “hill-and-valley” structure is explained by a change of the surface free energy during Si deposition and H termination. This favors the growth of facets, which are stable as long as the surface is covered with H. The effect is reversible, with the growth mode returning to layer by layer after H desorption.