Fölsch, S.; Winau, D.; Meyer, G.; Rieder, K.H.; Horn-von Hoegen, Michael; Schmidt, T.; Henzler, M.:
Ag-induced multi-step formation on Si(001)
In: Applied Physics Letters, Jg. 67 (1995), Heft 15, S. 2185 - 2187
1995Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Titel:
Ag-induced multi-step formation on Si(001)
Autor*in:
Fölsch, S.;Winau, D.;Meyer, G.;Rieder, K.H.;Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
;
Schmidt, T.;Henzler, M.
Erscheinungsjahr:
1995

Abstract:

The step topography of 4°‐misoriented Si(001) surfaces was examined by scanning tunneling microscopy and spot profile analyzing–low‐energy electron diffraction. The clean Si(001)‐(2×1) surface proves to be a single domain substrate, which is characterized by a regular array of double steps. This step structure is changed dramatically upon adsorption of submonolayer quantities of Ag at ∼700 K. In this case, the formation of multisteps with fourfold, sixfold, and eightfold step heights occurs. The single domain character of the substrate is preserved, now showing a Ag‐induced (3×2) reconstruction