Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation
In: Physical Review B : Condensed matter and materials physics, Vol. 80 (2009), No. 16, 165326 (10pp)
Title:
Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation
Author:
Stegner, Andre R.;Pereira, Rui N.;Lechner, Robert;Klein, Konrad;Wiggers, HartmutUDE
- GND
- 172637171
- LSF ID
- 1643
- ORCID
- 0000-0001-8487-9937
- Other
- connected with university
Year of publication:
2009