Strain state analysis of hetero-epitaxial systems
In: EPL (Europhysics Letters), Vol. 69 (2005), No. 4, p. 570
2005article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Related: 1 publication(s)
Title:
Strain state analysis of hetero-epitaxial systems
Author:
AlFalou, A.A.;Kammler, MartinUDE
- LSF ID
- 50189
- Other
- connected with university
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
- 0000-0003-0324-3457
- Other
- connected with university
Year of publication:
2005
Abstract:
We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process.