Characterizing Single Crystal Surfaces using High Resolution Electron Diffraction,
In: Analytical and Bioanalytical Chemistry, Jg. 379 (2004), Heft 4, S. 588 - 593
2004Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Damit verbunden: 1 Publikation(en)
Titel:
Characterizing Single Crystal Surfaces using High Resolution Electron Diffraction,
Autor*in:
Thien, DagmarUDE
- LSF ID
- 10445
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- LSF ID
- 48700
- ORCID
- 0000-0002-5878-2012
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
- 0000-0003-0324-3457
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2004
Abstract:
Characterization and controlled manipulation of surfaces is a crucial factor in modern processing of the technologically relevant Si(100) surface. Using spot profile analyzing low energy electron diffraction, the morphological changes from a single stepped vicinal Si(100) surface to a single-domain (2×1) reconstructed surface have been investigated in situ during Si deposition. The temperature range for formation of this kinetically-stabilized single-domain surface was found to be 400–500 °C. This single-domain surface could be preserved for further characterization and experiments after quenching to room temperature.