Homoepitaxy of Si(111) is surface defect mediated
In: Surface Science, Vol. 321 (1994), No. 1-2, pp. L129 - L136
Title in English:
Homoepitaxy of Si(111) is surface defect mediated
Author:
Horn-von Hoegen, MichaelUDE
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
- 0000-0003-0324-3457
- Other
- connected with university
corresponding author
Year of publication:
1994
Language of text:
English