Interface roughening of Ge delta layers on Si(111)
In: Physical Review B : Condensed matter and materials physics, Vol. 51 (1995), No. 12, p. 7598
1995article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Related: 1 publication(s)
Title:
Interface roughening of Ge delta layers on Si(111)
Author:
Falta, J.;Gog, T.;Materlik, G.;Müller, B.H.;Horn-von Hoegen, MichaelUDE
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
- 0000-0003-0324-3457
- Other
- connected with university
Year of publication:
1995
Abstract:
Ge δ layers, grown by molecular-beam epitaxy (MBE), surfactant-mediated epitaxy, and solid-phase epitaxy were characterized in situ by high-resolution low-energy electron diffraction and post growth by x-ray standing waves. Initial growth of Ge on Si is found to proceed in a double-bilayer fashion. Subsequent Si deposition leads to a bilayer growth mode. MBE Si deposition is accompanied by Si-Ge site exchanges leading to increased interfacial roughening, which can be partially reduced by solid-phase epitaxy and use of surfactants.