Blekker, Kai; Münstermann, Benjamin; Matiss, Andreas; Do, Quoc-Thai; Regolin, Ingo; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef:
High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide Contacts
In: IEEE Transactions on Nanotechnology, Vol. 9 (2010), No. 4, pp. 432 - 437
2010article/chapter in journal
Electrical Engineering and Information TechnologyFaculty of Engineering » Engineering and Information Technology » HochfrequenztechnikFaculty of Engineering » Engineering and Information Technology » Bauelemente der Höchstfrequenzelektronik
Related: 1 publication(s)
Title in English:
High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide Contacts
Author:
Blekker, KaiUDE
LSF ID
49281
Other
connected with university
;Münstermann, BenjaminUDE
LSF ID
49881
Other
connected with university
;Matiss, Andreas
;Do, Quoc-Thai
;Regolin, Ingo
;Brockerhoff, WolfgangUDE
LSF ID
1474
Other
connected with university
;Prost, WernerUDE
LSF ID
1459
ORCID
0000-0003-0249-5927ORCID iD
Other
connected with university
;Tegude, Franz-JosefUDE
GND
1212547101
LSF ID
3910
ORCID
0000-0001-5171-2065ORCID iD
Other
connected with university
Year of publication:
2010
DOI
10.1109/TNANO.2009.2032917
IEEE ID
5272322
Scopus ID
77954578830
Language of text:
English
Appears in
IEEE Transactions on Nanotechnology
Title in English (abbreviated):
IEEE Trans. Nanotechnol.
Place of publication:
New York, NY
Publisher:
Institute of Electrical and Electronics Engineers Inc.
in:
Vol. 9 (2010), No. 4, pp. 432 - 437
ISSN
1536-125X Show availability online & print
ISSN
1941-0085 Show availability online & print
ZDB ID
2082654-0
Keyword, Topic:
Gate length scaling ; high-frequency characterization ; InAs nanowire FET