Interface roughening of Ge delta layers on Si(111)
In: Physical Review B : Condensed matter and materials physics, Jg. 51 (1995), Heft 12, S. 7598
1995Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Damit verbunden: 1 Publikation(en)
Titel:
Interface roughening of Ge delta layers on Si(111)
Autor*in:
Falta, J.;Gog, T.;Materlik, G.;Müller, B.H.;Horn-von Hoegen, MichaelUDE
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
- 0000-0003-0324-3457
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
1995
Abstract:
Ge δ layers, grown by molecular-beam epitaxy (MBE), surfactant-mediated epitaxy, and solid-phase epitaxy were characterized in situ by high-resolution low-energy electron diffraction and post growth by x-ray standing waves. Initial growth of Ge on Si is found to proceed in a double-bilayer fashion. Subsequent Si deposition leads to a bilayer growth mode. MBE Si deposition is accompanied by Si-Ge site exchanges leading to increased interfacial roughening, which can be partially reduced by solid-phase epitaxy and use of surfactants.