Horn-von Hoegen, Michael:
Structural dynamics at surfaces by ultrafast reflection high-energy electron diffraction
In: Structural Dynamics / American Crystallographic Association (ACA) (Eds.). , Vol. 11 (2024), No. 2, Article 021301
2024Review in journalOA Gold
Physics (incl. Astronomy)Scientific institutes » Center for Nanointegration Duisburg-Essen (CENIDE)Faculty of Physics
Related: 1 publication(s)
Title in English:
Structural dynamics at surfaces by ultrafast reflection high-energy electron diffraction
Author:
Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Other
connected with university
corresponding author
Year of publication:
2024
Open Access?:
OA Gold
Scopus ID
Note:
OA Förderung 2024
Language of text:
English
Type of resource:
Text

Abstract in English:

Many fundamental processes of structural changes at surfaces occur on a pico- or femtosecond timescale. In order to study such ultrafast processes, we have combined modern surface science techniques with fs-laser pulses in a pump-probe scheme. Grazing incidence of the electrons ensures surface sensitivity in ultrafast reflection high-energy electron diffraction (URHEED). Utilizing the Debye-Waller effect, we studied the nanoscale heat transport from an ultrathin film through a hetero-interface or the damping of vibrational excitations in monolayer adsorbate systems on the lower ps-timescale. By means of spot profile analysis, the different cooling rates of epitaxial Ge nanostructures of different size and strain state were determined. The excitation and relaxation dynamics of a driven phase transition far away from thermal equilibrium is demonstrated using the In-induced (8 X 2) reconstruction on Si(111). This Peierls-distorted surface charge density wave system exhibits a discontinuous phase transition of first order at 130 K from a (8 X 2) insulating ground state to (4 X 1) metallic excited state. Upon excitation by a fs-laser pulse, this structural phase transition is non-thermally driven in only 700 fs into the excited state. A small barrier of 40 meV hinders the immediate recovery of the ground state, and the system is found in a metastable supercooled state for up to few nanoseconds.