Enhanced high temperature performance of PD-SOI MOSFETs in analog circuits using reverse body biasing
In: Journal of Microelectronics and Electronic Packaging, Vol. 10 (2013), No. 4, pp. 171 - 182
2013article/chapter in journal
Electrical Engineering and Information TechnologyFaculty of Engineering » Engineering and Information Technology » Elektronische Bauelemente und Schaltungen
Related: 1 publication(s)
Title in English:
Enhanced high temperature performance of PD-SOI MOSFETs in analog circuits using reverse body biasing
Author:
Schmidt, Alexander;Kappert, Holger;Kokozinski, RainerUDE
- GND
- 173084451
- LSF ID
- 50200
- ORCID
-
0000-0003-3416-3310
- Other
- connected with university
Year of publication:
2013
Language of text:
English
Title in English (abbreviated):
J. Microelectron. Electron. Packag.
Place of publication:
Pittsburgh
Publisher:
IMAPS
in:
Vol. 10 (2013), No. 4, pp. 171 - 182
ISSN
ZDB ID
Type of resource:
Text