Focused ion beam modifications of indium phosphide photonic crystals
In: Microelectronic engineering : an international journal of semiconductor manufacturing technology, Jg. 85 (2007), Heft 5-8, S. 1244 - 1247
2007Artikel/Aufsatz in Zeitschrift
Elektrotechnik
Titel:
Focused ion beam modifications of indium phosphide photonic crystals
Autor*in:
Nellen, Philipp M.;Strasser, Patrick;Callegari, Victor;Wüest, Robert;Erni, DanielUDE
- GND
- 1175897205
- LSF ID
- 47126
- ORCID
- 0000-0002-1467-6373
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2007
Abstract:
This paper presents investigations in focused ion beam structuring and modification of indium phosphide/indium gallium arsenide phosphide based photonic crystal power splitters. The optical transmission and splitting ratio were compared to devices fabricated with electron beam lithography and inductively-coupled plasma, reactive ion etching. Prototyping of novel photonic designs, chip modifications, repair, and post-processing with focused ion beams may well reduce time to market in the telecommunication industry.