Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction"
In: MRS Proceedings, Band 1172 (2009), S. 4 - 8
2009Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Titel:
Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction"
Autor*in:
Hanisch-Blicharski, AnjaUDE
- LSF ID
- 12007
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- LSF ID
- 13457
- ORCID
- 0000-0001-8172-0568
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- LSF ID
- 10448
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- LSF ID
- 50189
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
- 0000-0003-0324-3457
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2009
Abstract:
With time resolved ultrafast electron diffraction the cooling process across the interface between a thin film and the underlying substrate was studied after excitation with short laser pulses. From the exponential decay of the surface temperature evolution a thermal boundary conductance of 1430 W/(cm2K) is determined for a 9.7 nm thin Bi(111) film on Si(111). A linear dependence between laser fluence and initial temperature rise was measured for film-thicknesses between 2.5 nm and 34.5 nm. The ratio of initial temperature rise and laser fluence for different film-thicknesses is compared to a model taking multilayer optics into account. The data agree well with this model.