Focused ion beam modifications of indium phosphide photonic crystals
In: Microelectronic engineering : an international journal of semiconductor manufacturing technology, Vol. 85 (2007), No. 5-8, pp. 1244 - 1247
2007article/chapter in journal
Electrical Engineering and Information Technology
Title:
Focused ion beam modifications of indium phosphide photonic crystals
Author:
Nellen, Philipp M.;Strasser, Patrick;Callegari, Victor;Wüest, Robert;Erni, DanielUDE
- GND
- 1175897205
- LSF ID
- 47126
- ORCID
- 0000-0002-1467-6373
- Other
- connected with university
Year of publication:
2007
Abstract:
This paper presents investigations in focused ion beam structuring and modification of indium phosphide/indium gallium arsenide phosphide based photonic crystal power splitters. The optical transmission and splitting ratio were compared to devices fabricated with electron beam lithography and inductively-coupled plasma, reactive ion etching. Prototyping of novel photonic designs, chip modifications, repair, and post-processing with focused ion beams may well reduce time to market in the telecommunication industry.