Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold"
In: Physical Review B : Condensed matter and materials physics, Vol. 63 (2001), No. 19, 193306 (4p)
2001article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Related: 1 publication(s)
Title:
Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold"
Author:
Cavalleri, Andrea;Siders, Craig W.;Rose-Petruck, Christoph G.;Jimenez, Ralph;Tóth, Csaba;Squier, J.A.;Barty, Christopher P.P.;Wilson, Kent R.;Sokolowski-Tinten, KlausUDE
- GND
- 172725364
- LSF ID
- 13459
- ORCID
- 0000-0002-7979-5357
- Other
- connected with university
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
- 0000-0003-0324-3457
- Other
- connected with university
- GND
- 121993092X
- LSF ID
- 10402
- ORCID
- 0000-0001-5618-3879
- Other
- connected with university
Year of publication:
2001
Abstract:
The pulse-width dependence of thermal melting and ablation thresholds in germanium and gallium arsenide is correlated to direct, ultrafast x-ray measurements of laser-heated depths. The heating dynamics, determined by the interplay of nonlinear optical absorption, delayed Auger heating, and high-density carrier diffusion, explain the scaling laws of thermal melting thresholds in different semiconductors.