Nucleation and growth during molecular beam epitaxy (MBE) of Si on Si(111)
The 11th International Seminar on Surface Physics ; May 11-16, 1987, Piechowice, Poland
In: Surface Science, Jg. 200 (1988), Heft 2-3, S. 235 - 246
Titel in Englisch:
Nucleation and growth during molecular beam epitaxy (MBE) of Si on Si(111)
Konferenz
The 11th International Seminar on Surface Physics ; May 11-16, 1987, Piechowice, Poland
Autor*in:
Altsinger, R.;Busch, H.;Horn-von Hoegen, MichaelUDE
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
- 0000-0003-0324-3457
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
1988
Sprache des Textes:
Englisch