Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef:
Effects of (NH4)(2)S passivation on the performance of graded-base InGaAs/InP HBTs
In: Physica status solidi A - Applied research, Vol. 201 (2004), No. 5, pp. 1017 - 1021
2004article/chapter in journal
Electrical Engineering and Information Technology
Title:
Effects of (NH4)(2)S passivation on the performance of graded-base InGaAs/InP HBTs
Author:
Jin, Zhi;Neumann, Stefan;Prost, WernerUDE
LSF ID
1459
ORCID
0000-0003-0249-5927ORCID iD
Other
connected with university
;Tegude, Franz-JosefUDE
GND
1212547101
LSF ID
3910
ORCID
0000-0001-5171-2065ORCID iD
Other
connected with university
Year of publication:
2004
Appears in
Physica status solidi A - Applied research
in:
Vol. 201 (2004), No. 5, pp. 1017 - 1021
ISSN
1521-396X Show availability online & print
Library shelfmark:
67 P 27

Abstract:

Graded-base InGaAs/lnP HBTs were passivated by (NH4)(2)S solution. The current gain increased after passivation. A current gain degradation was found when the passivated HBT was exposed to air. The Gummel plots in forward and reverse modes were used to evaluate the properties of the base-emitter and base-collector junctions. The degradations of the base-emitter and base-collector junctions were found to be different. The current gain was independent on the emitter size after passivation compared to the emitter size dependent one before passivation. The size dependent current gain appeared when HBTs exposed to air for 10 days.