High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide Contacts
In: IEEE Transactions on Nanotechnology, Vol. 9 (2010), No. 4, pp. 432 - 437
2010article/chapter in journal
Electrical Engineering and Information TechnologyFaculty of Engineering » Engineering and Information Technology » HochfrequenztechnikFaculty of Engineering » Engineering and Information Technology » Bauelemente der Höchstfrequenzelektronik
Related: 1 publication(s)
Title in English:
High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide Contacts
Author:
Blekker, KaiUDE
- LSF ID
- 49281
- Other
- connected with university
- LSF ID
- 49881
- Other
- connected with university
- LSF ID
- 1474
- Other
- connected with university
- LSF ID
- 1459
- ORCID
- 0000-0003-0249-5927
- Other
- connected with university
- GND
- 1212547101
- LSF ID
- 3910
- ORCID
- 0000-0001-5171-2065
- Other
- connected with university
Year of publication:
2010
IEEE ID
Scopus ID
Language of text:
English
Keyword, Topic:
Gate length scaling ; high-frequency characterization ; InAs nanowire FET