Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation

Stegner, Andre R.; Pereira, Rui N.; Lechner, Robert; Klein, Konrad; Wiggers, Hartmut; Stutzmann, Martin; Brandt, Martin:

In: Physical Review B : Condensed matter and materials physics, Vol. 80 (2009), No. 16, 165326 (10pp)

2009article/chapter in journal

Mechanical Engineering

Title:

Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation

Author:

Stegner, Andre R.;Pereira, Rui N.;Lechner, Robert;Klein, Konrad;Wiggers, Hartmut^UDE;Stutzmann, Martin;Brandt, Martin

Year of publication:

2009

Appears in

Place of publication:

College Park

Publisher:

American Physical Society (APS)

in:

Vol. 80 (2009), No. 16, 165326 (10pp)

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Note:

1.1970 - 92.2015

Succeeding:

University bibliography