Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction"
In: MRS Proceedings, Vol. 1172 (2009), pp. 4 - 8
2009article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Title:
Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction"
Author:
Hanisch-Blicharski, AnjaUDE
- LSF ID
- 12007
- Other
- connected with university
- LSF ID
- 13457
- ORCID
- 0000-0001-8172-0568
- Other
- connected with university
- LSF ID
- 10448
- Other
- connected with university
- LSF ID
- 50189
- Other
- connected with university
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
- 0000-0003-0324-3457
- Other
- connected with university
Year of publication:
2009
Abstract:
With time resolved ultrafast electron diffraction the cooling process across the interface between a thin film and the underlying substrate was studied after excitation with short laser pulses. From the exponential decay of the surface temperature evolution a thermal boundary conductance of 1430 W/(cm2K) is determined for a 9.7 nm thin Bi(111) film on Si(111). A linear dependence between laser fluence and initial temperature rise was measured for film-thicknesses between 2.5 nm and 34.5 nm. The ratio of initial temperature rise and laser fluence for different film-thicknesses is compared to a model taking multilayer optics into account. The data agree well with this model.