Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization

Kammler, Martin; Reinking, Dirk; Hofmann, Karl R.; Horn-von Hoegen, Michael:

In: Thin Solid Films, Vol. 336 (1999), No. 1-2, pp. 29 - 33

1999article/chapter in journal

Physics (incl. Astronomy)

Title in English:

Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization

Author:

Kammler, Martin^UDE;Reinking, Dirk;Hofmann, Karl R.;Horn-von Hoegen, Michael^UDE

Year of publication:

1999

DOI

Language of text:

English

Appears in

Place of publication:

Amsterdam

Publisher:

Elsevier

in:

Vol. 336 (1999), No. 1-2, pp. 29 - 33

ISSN

ISSN

ZDB ID

University bibliography