Hofmann, Karl R.; Reinking, Dirk; Kammler, Martin; Horn-von Hoegen, Michael:
Surfactant-grown low-doped Germanium layers on Silicon with high electron mobilities
In: Thin Solid Films, Vol. 321 (1998), No. 1-2, pp. 125 - 130
1998article/chapter in journal
Physics (incl. Astronomy)
Related: 1 publication(s)
Title in English:
Surfactant-grown low-doped Germanium layers on Silicon with high electron mobilities
Author:
Hofmann, Karl R.;Reinking, Dirk;Kammler, MartinUDE
LSF ID
50189
Other
connected with university
;Horn-von Hoegen, MichaelUDE
GND
1201039908
LSF ID
10366
ORCID
0000-0003-0324-3457ORCID iD
Other
connected with university
Year of publication:
1998
DOI
10.1016/S0040-6090(98)00460-X
Language of text:
English
Appears in
Thin Solid Films
Place of publication:
Amsterdam
Publisher:
Elsevier
in:
Vol. 321 (1998), No. 1-2, pp. 125 - 130
ISSN
0040-6090 Show availability online & print
ISSN
1879-2731 Show availability online & print
ZDB ID
1482896-0