Stress reduction and interface quality of buried Sb delta-layers on Si(001)
In: Applied Physics Letters, Vol. 69 (1996), No. 19, pp. 2906 - 2908
1996article/chapter in journal
Physics (incl. Astronomy)Faculty of Physics » Experimental Physics
Title:
Stress reduction and interface quality of buried Sb delta-layers on Si(001)
Author:
Falta, J.;Bahr, D.;Hille, A.;Materlik, G.;Kammler, MartinUDE
- LSF ID
- 50189
- Other
- connected with university
- GND
- 1201039908
- LSF ID
- 10366
- ORCID
-
0000-0003-0324-3457
- Other
- connected with university
Year of publication:
1996
Appears in
Applied Physics Letters
in:
Vol. 69 (1996), No. 19, pp. 2906 - 2908
ISSN
ISSN
Abstract:
We have investigated the width dependence of Sb delta (δ) doping layers grown by Si solid phase epitaxy (SPE) on the Sb surface reconstruction prior to Si deposition. Depending on the Sb adsorption conditions a 2×1 and a 2×n surface reconstruction is observed. Measurements of crystal truncation rods and x‐ray standing waves show a drastically reduced interface roughness and a better crystal quality for δ layers grown on Sb:Si(001)−2×n substrates in comparison to Sb:Si(001)‐2×1, which we attribute to reduced surface stress of the Sb:Si(001)‐2×n reconstruction. © 1996 American Institute of Physics.