Island Scaling in Strained Heteroepitaxy : InAs/GaAs(001)
In: Physical Review Letters, Jg. 74 (1995), Heft 16, S. 3209 - 3212
1995Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)Fakultät für Physik » Experimentalphysik
Damit verbunden: 1 Publikation(en)
Titel:
Island Scaling in Strained Heteroepitaxy : InAs/GaAs(001)
Autor*in:
Bressler-Hill, V.;Varma, S.;Lorke, AxelUDE
- GND
- 1042619697
- LSF ID
- 2509
- ORCID
-
0000-0002-0405-7720
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
1995
Erschienen in
Erscheinungsort:
College Park
Verlag:
American Physical Society (APS)
in:
Jg. 74 (1995), Heft 16, S. 3209 - 3212
ISSN
ISSN
ZDB ID
Signatur der UB:
Abstract:
Scaling properties associated with island size and separation distributions are presented for three different coverages of InAs on GaAs(001). The island size distribution is similar to that observed for homoepitaxy and obeys scaling behavior when considering the average island area. Since the island growth is anisotropic, the island size distribution was separated into [110] and [ 1¯10] components, and scaling is only observed in the [ 1¯10] direction. An analysis of the radial distribution of the islands shows clustering.