Abstract:

We report on the growth and the transport characterization of sub-monolayer inserted quantum wells grown on vicinal GaAs (100) surfaces. The deposition conditions were carefully adjusted to ensure an ordered array of steps on the surface during growth. In magneto-transconductance we observe that the Shubnikov-de Haas oscillations of the samples vanish at intermediate gate-voltages. In the same regime, the resistance across the steps exhibits a pronounced plateau-like increae whereas the resistance along the steps remains essentially unchanged. Lateral miniband formation as well as the presence of a limited number of traps are discussed as possible explanations for the experimental findings.